Meet us at E-MRS Fall Meeting in Warsaw, 17-20 Sept

Sep 18 2018

Meet Petr Khomyakov from the Synopsys QuantumATK team at the E-MRS Fall Meeting in Warsaw, Poland on Sept 17-20. 

emrs fall

Petr will give a talk:

Title: Advanced atomistic simulations of semiconductors using QuantumATK (J.12.2)

Date: 20 Sept (Thursday)

Scheduled Time:  11.40

Session: MODELLING / Session J: Theory and simulation in physics for materials applications


Resume : The aggressive device scaling required to fulfill the requirements of the International Roadmap for Devices and Systems (IRDS) [1] calls for even more advanced simulation tools to describe realistically ultra-scaled device components. Atomistic simulations play a central role in this scenario, as they enable the parameter-free description of new materials and complex physical processes with a level of realism unattainable with conventional technology computer aided design (TCAD) tools. In this talk, the QuantumATK [2,3] software suite will be presented. QuantumATK is an industry-proven platform for atomic-scale modeling of semiconductor materials, nanostructures and nanoelectronic devices. It combines a professional graphical user interface to setup, run and analyze atomistic simulations, with a selection of state-of-the-art atomistic methods, which can be used in a multi-model fashion to achieve complex workflows. In this contribution, several applications of QuantumATK in the context of semiconductor materials and devices will be covered. Initially, the impact of doping on the current-voltage characteristics of truly semi-infinite metal-semiconductor interfaces [4], and of Fermi-level pinning on the transconductance of gated 2D-FET devices made of vdW heterostructures [5], will be discussed. It will then be demonstrated how the QuantumATK multi-model approach allows one to include electron-phonon coupling effects in atomistic large-scale TFET devices [6] to calculate efficiently the electrical properties bulk materials. The use of QuantumATK in the field of spintronics will also be highlighted, in relation to the understanding of the spintronic effects at the interface between topological insulators and ferromagnetic metals [7].


[3] Stokbro et al., The QuantumATK atomic-scale modelling toolbox, in preparation;
[4] Stradi et al., Physical Review B 93, 155302 (2016);
[5] Szabo et al., IEEE Electron Device Letters 36, 514 (2015);
[6] Gunst et al., Physical Review B 96, 161404 (2017);
[7] Marmolejo-Tejada et al., Nano Lett. 17, 5626 (2017).