Have a look at the Synopsys TCAD newsletter for the IEDM conference highlighting QuantumATK

Jan 04 2018

Have a look at the special IEDM 2017 edition of the Synopsys TCAD news (Technology Computer Aided Design), highlighting atomistic materials modeling with QuantumATK (former VNL-ATK), and why it is important for today's and future semiconductor technology development!

This edition of the TCAD news is very special for us as we became part of the Synopsys TCAD group in Sept, 2017 and this is our first newsletter for the IEDM, International Electron Devices Meeting, Conference. IEDM presents breakthroughs in semiconductor and electronic device technology, design, manufacturing, physics, and modeling.


The newsletter introduces what atomistic quantum mechanical (QM) modeling of materials is, provides a description of Density Functional Theory (DFT)  as a quantative approach for the QM modeling at the atomistic level and illustrates its application using QuantumATK (former VNL-ATK) to several problems highly relevant to today’s and future semiconductor and electronic device development.

  • Calculation of Semiconductor bandstructures (as shown in the Figure above) in order to extract effective masses from the bands to be used in TCAD advanced transport simulators (a case study on Si nanowire of 4.5 nm diameter shows that 2D QM confinement of the structure significantly alters the bandstructure relative to bulk silicon and thus the carrier transport in the channel).
  • Simulation of metal-semiconductor contact resistance which is an important factor in the performance of sub-10 nm semiconductor devices.
    Three cases studies are presented, showing good agreement with experimental results and emphasising that the detailed understanding of the contact resistance at the atomic scale is necessary in order to eventually optimize the devices with minimum contact resistance:
    1. study by Global Foundries and IBM Research on the TiGe/Ge contact resistance;
    2. study by Imec, QuantumWise and Others on the TiSi/Si contact resistance;
    3. study by QuantumWise on the M-InGaAs (M=Ti, W, Mo) contact resistance.