Join us for a free webinar on how to include electron-phonon scattering effects in large scale atomistic device simulations using the Special Thermal Displacement (STD)-Landauer method in VNL-ATK 2017. These effects play a central role in the performance of nano-scale electronic devices, such as rectifiers and transistors.
Time: The webinar will be held on December, 14th, 9 am and 8 PM CET (Central European Time, Denmark). The duration is about 30 minutes.
Presented by: Daniele Stradi, PhD and Ulrik Grønbjerg Vej-Hansen, PhD from Synopsys QuantumWise.
You can register here.
This webinar is targeted to:
- ATK users who already perform atomistic device simulations;
- egineers/researchers who perform TCAD simulations of devices.
We will cover:
- why electron-phonon scattering effects play a central role in the performance of nano-scale electronic devices;
- how and why the STD-Landauer method works (as an approximation for the current including explicit electron-phonon couplings) for including electron-phonon scattering effects and why it is so efficient;
- how to set up, run STD-Landauer calculations and analyze results, following a case study on a Si p-n junction;
- example applications of the STD-Landauer method for calculating electrical characteristics of semiconductor devices.
Afterwards, there will be time for questions and discussion.
After registerimg, you will receive a confirmation email containing information about joining the webinar. For any questions about the webinar, please contact .
We look forward to meeting you during the webinar!