QuantumWise Forum
June 20, 2013, 14:06 *
Welcome, Guest. Please login or register.
Did you miss your activation email?

Login with username, password and session length
News:
 
   Home   Help Search Login Register  
Pages: [1]   Go Down
  Print  
Author Topic: regarding gate design  (Read 991 times)
0 Members and 1 Guest are viewing this topic.
Val
Regular ATK user
**

Reputation: 0
Offline Offline

Posts: 22


View Profile
« on: January 28, 2011, 08:35 »

sir,

1.when implementing the gate in the continuum region,what is the material that is used in the metallic region (as it is not mentioned) and can we choose the workfunction for the same.

2.when a bias voltage of o.o1 is to be applied,how and where is this input to be given.

3.if Hfo2 is to be used as the dielectric what input should i give in the spatial region corresponding to it.(value) .
Logged
kstokbro
QuantumWise Staff
Supreme ATK Wizard
*****

Reputation: 4
Offline Offline

Posts: 262


View Profile WWW
« Reply #1 on: January 29, 2011, 07:50 »


1. The work function of the metalic region will determine where is the zero value of the gate potential. Thus, the effect of the work function is to shift the gate potential by a constant. You cannot set this parameter, and you need to make such corrections as post analysis. 
I.e. work function of electrode is 4 eV, work function of gate is 5 eV, then you must add -1 V to you gate potential axis as post analysis.

2. You can set this parameter in the script generator tool in vnl, see forinstance the graphene device tutorial or the ATKDeviceTutorial

3 The dielectric constant of HfO2 is around 29 (many values can be found in litterature) consisting of an electronic part 6 and lattice part 23.
Logged
Ash
Regular ATK user
**

Reputation: 0
Offline Offline

India India

Posts: 24



View Profile
« Reply #2 on: May 3, 2012, 16:37 »


1. The work function of the metalic region will determine where is the zero value of the gate potential. Thus, the effect of the work function is to shift the gate potential by a constant. You cannot set this parameter, and you need to make such corrections as post analysis. 
I.e. work function of electrode is 4 eV, work function of gate is 5 eV, then you must add -1 V to you gate potential axis as post analysis.

2. You can set this parameter in the script generator tool in vnl, see forinstance the graphene device tutorial or the ATKDeviceTutorial


Can you please tell me how to determine the work function for electrode and gate for performing such post analysis  Shocked
-- Thank you
Logged
gM
Regular ATK user
**

Reputation: 1
Offline Offline

Canada Canada

Posts: 19


View Profile
« Reply #3 on: August 17, 2012, 23:15 »

So is the default value for the metal workfunction of the gate 4eV?
Logged
Anders Blom
QuantumWise Staff
Supreme ATK Wizard
*****

Reputation: 37
Offline Offline

Denmark Denmark

Posts: 2864



View Profile WWW
« Reply #4 on: August 18, 2012, 11:19 »

No, there was a small spelling mistake in that post. It should say "I.e. if work function of electrode is 4 eV...".
Logged
gM
Regular ATK user
**

Reputation: 1
Offline Offline

Canada Canada

Posts: 19


View Profile
« Reply #5 on: August 24, 2012, 00:38 »

Ok thanks.  So regarding Ash's question, what is the workfunction of the metal gate and/or how is it determined exactly?

Regards.
Logged
Anders Blom
QuantumWise Staff
Supreme ATK Wizard
*****

Reputation: 37
Offline Offline

Denmark Denmark

Posts: 2864



View Profile WWW
« Reply #6 on: August 24, 2012, 08:49 »

Please read kstrokbro's answer again. You need to know the workfunction yourself (i.e. you decide what the metal is), and adjust the values in the plots afterwards for it.
Logged
Pages: [1]   Go Up
  Print  
 
Jump to:  

Powered by MySQL Powered by PHP Powered by SMF 1.1.18 | SMF © 2006-2008, Simple Machines Valid XHTML 1.0! Valid CSS!